Simon Fraser University


2 Source pulsed-DC Sputter: Al, Si

4 Source RF Sputter: SiO2, Ti, 1 source unoccupied

- <5E-7 Torr base pressure

- Substrate heating up to 800degC

- processing for small pieces, 50 mm, 100 mm, and 150 mm wafers

Tool Status Up
Manufacturer Kurt J. Lesker
Typical Application Oxide deposition
Location 6060.8
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Abbin Perunnilathil Joy