Simon Fraser University

PVD 4


2 Source pulsed-DC Sputter: Al, Si

4 Source RF Sputter: SiO2, TiO2, Ti, 1 source unoccupied

- <5E-7 Torr base pressure

- Substrate heating up to 800degC

- processing for small pieces, 50 mm, 100 mm, and 150 mm wafers


Tool Status Up
Manufacturer Kurt J. Lesker
Typical Application Oxide deposition
Location 6060.8
Related Documents
Contact Information

Training

Chris Balicki balicki@4dlabs.ca